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±0.3v bulk-driven fully differential buffer with high figures of merit

Identificadores del recurso

Gangineni, M., Ramirez-Angulo, J., Vázquez-Leal, H., Huerta-Chua, J., Lopez-Martin, A. J., & Carvajal, R. G. (2022). ±0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit. Journal of Low Power Electronics and Applications, 12(3), 35. http://dx.doi.org/10.3390/jlpea12030035

2079-9268

10.3390/jlpea12030035

https://academica-e.unavarra.es/handle/2454/44488

Procedència

(Academica-e: repositorio digital de la Universidad Pública de Navarra)

Fitxa

Títol:: ±0.3v bulk-driven fully differential buffer with high figures of merit
Tema:: Analog buffer; Bulk-driven op-amp; Fully differential; Low-voltage; Micropower
Descripció:: A high performance bulk-driven rail-to-rail fully differential buffer operating from ±0.3V supplies in 180 nm CMOS technology is reported. It has a differential–difference input stage and common mode feedback circuits implemented with no-tail, high CMRR bulk-driven pseudo-differential cells. It operates in subthreshold, has infinite input impedance, low output impedance (1.4 kΩ), 86.77 dB DC open-loop gain, 172.91 kHz bandwidth and 0.684 µWstatic power dissipation with a 50-pF load capacitance. The buffer has power efficient class AB operation, a small signal figure of merit FOMss = 12.69 MHzpFµW-1, a large signal figure of merit FOMls = 34.89 (V/µs) pFµW-1, CMRR = 102 dB, PSRR+ = 109 dB, PSRR- = 100 dB, 1.1 µV/√Hz input noise spectral density, 0.3 mVrms input noise and 3.5 mV input DC offset voltage.; This research was partially funded by AEI/FEDER, grant number PID2019-107258RB-C31 and in part by the Andalusia Economy, Knowledge, Enterprise and University Council under Project P18-FR-4317.
Idioma:: English
Relació:: Journal of Low Power Electronics and Applications, 2022,12,35; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-107258RB-C31/ES/; https://doi.org/10.3390/jlpea12030035
Autor/Productor:: Gangineni, Manaswini; Ramírez-Angulo, Jaime; Vázquez-Leal, Héctor; Huerta-Chua, Jesús; López Martín, Antonio; González Carvajal, Ramón
Editor:: MDPI
Otros colaboradores/productores:: Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de Comunicación
Drets:: © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.; http://creativecommons.org/licenses/by/4.0/; info:eu-repo/semantics/openAccess
Data:: 2022
Tipo de recurso:: info:eu-repo/semantics/article; Versión publicada / Argitaratu den bertsioa; info:eu-repo/semantics/publishedVersion
Format:: application/pdf

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2. <dc:creator>Gangineni, Manaswini</dc:creator>
3. <dc:creator>Ramírez-Angulo, Jaime</dc:creator>
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