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<oai_dc:dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
<dc:title>A Peak Detect & Hold circuit to measure and exploit RTN in a 65-nm CMOS PUF</dc:title>
<dc:creator>Rubio-Barbero, Francisco J.</dc:creator>
<dc:creator>Camacho-Ruiz, Eros</dc:creator>
<dc:creator>Castro-López, R.</dc:creator>
<dc:creator>Roca, Elisenda</dc:creator>
<dc:creator>Fernández, Francisco V.</dc:creator>
<dc:contributor>Agencia Estatal de Investigación (España)</dc:contributor>
<dc:contributor>Ministerio de Ciencia e Innovación (España)</dc:contributor>
<dc:contributor>Junta de Andalucía</dc:contributor>
<dc:subject>Cybersecurity | Peak Detect & Hold | PUF | RTN</dc:subject>
<dc:description>Trabajo presentado en el International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), celebrado en Funchal (Portugal) del 3 al 5 de Julio de 2023. Copyright IEEE</dc:description>
<dc:description>A Physical Unclonable Function (PUF) that uses the Random Telegraph Noise (RTN) effect has been recently proposed. This PUF requires an analog sensing component whose design becomes critical to properly process the underlying entropy and thus provide a response to a given challenge. This analog sensing component needs to keep track of the RTN fluctuations through the detection and acquisition of the maximum and minimum excursions of a signal of interest that contains all the RTN information in a transistor. This paper describes the Peak Detect and Hold circuit that carries out that tracking, which has been designed with accuracy, reliability and fast dynamic response in mind. The proposed implementation has been designed in a 65-nm CMOS technology with a supply voltage of 1.2 V.</dc:description>
<dc:description>This work was supported by grant PID2019-103869RB-C31 funded by MCIN/AEI/10.13039/501100011033. The work was also supported by grant TED2021-131240B-I00 funded by MCIN/AEI/10.13039/501100011033 and by the “European Union NextGenerationEU/PRTR and by grant ProyExcel_00536 funded by Consejería de Universidad, Investigación e Innovación of Junta de Andalucía. Eros Camacho acknowledges MIU for supporting his research activity through grant FPU20/03008.</dc:description>
<dc:description>Peer reviewed</dc:description>
<dc:date>2024-04-24T16:40:31Z</dc:date>
<dc:date>2024-04-24T16:40:31Z</dc:date>
<dc:date>2023-07-31</dc:date>
<dc:type>Conference Paper</dc:type>
<dc:identifier>9798350332650</dc:identifier>
<dc:identifier>http://hdl.handle.net/10261/354895</dc:identifier>
<dc:identifier>10.1109/SMACD58065.2023.10192247</dc:identifier>
<dc:identifier>2-s2.0-85168680212</dc:identifier>
<dc:identifier>https://api.elsevier.com/content/abstract/scopus_id/85168680212</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>#PLACEHOLDER_PARENT_METADATA_VALUE#</dc:relation>
<dc:relation>#PLACEHOLDER_PARENT_METADATA_VALUE#</dc:relation>
<dc:relation>#PLACEHOLDER_PARENT_METADATA_VALUE#</dc:relation>
<dc:relation>info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-103869RB-C31/ES/THE VARIABILITY CHALLENGE IN NANO-CMOS: FROM DEVICE MODELING TO IC DESIGN FOR MITIGATION AND EXPLOITATION (VIGILANT-IMSE)/</dc:relation>
<dc:relation>info:eu-repo/grantAgreement/AEI/ PLAN ESTATAL DE INVESTIGACIÓN CIENTÍFICA, TÉCNICA Y DE INNOVACIÓN 2021-2023/TED2021-131240B-I00/ES VARIABILIDAD TEMPORAL EN CIRCUITOS INTEGRADOS: ENEMIGO (Y COMO COMBATIRLO PARA LA ECONOMIA CIRCULAR) Y AMIGO (Y COMO EXPLOTARLO PARA UNA SOLUCION DISRUPTIVA EN CIBERSEGURIDAD)</dc:relation>
<dc:relation>info:eu-repo/grantAgreement/Junta de Andalucia/ PLAN ANDALUZ DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN (PAIDI 2020)/ ProyExcel_00536/EXPLOTACIÓN DEL RTN PARA SEGURIDAD HARDWARE RESISTENTE AL ENVEJECIMIENTO (RTN-SECURE)</dc:relation>
<dc:relation>Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023</dc:relation>
<dc:relation>Postprint</dc:relation>
<dc:relation>https://doi.org/10.1109/SMACD58065.2023.10192247</dc:relation>
<dc:relation>Sí</dc:relation>
<dc:rights>open</dc:rights>
<dc:publisher>Institute of Electrical and Electronics Engineers</dc:publisher>
</oai_dc:dc>