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<oai_dc:dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
<dc:title>A detailed, cell-by-cell look into the effects of aging on an SRAM PUF using a specialized test array</dc:title>
<dc:creator>Santana-Andreo, A.</dc:creator>
<dc:creator>Saraza-Canflanca, P.</dc:creator>
<dc:creator>Carrasco-Lopez, H.</dc:creator>
<dc:creator>Castro-López, R.</dc:creator>
<dc:creator>Roca, Elisenda</dc:creator>
<dc:creator>Fernández, Francisco V.</dc:creator>
<dc:contributor>Agencia Estatal de Investigación (España)</dc:contributor>
<dc:contributor>Ministerio de Ciencia e Innovación (España)</dc:contributor>
<dc:contributor>Junta de Andalucía</dc:contributor>
<dc:subject>Aging | BTI | Experimental testing | Reliability | SRAM PUF</dc:subject>
<dc:description>Trabajo presentado en el International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), celebrado en Funchal (Portugal) del 3 al 5 de Julio de 2023. Copyright IEEE</dc:description>
<dc:description>The use of SRAM power-up values is the foundation of one of the most common Physical Unclonable Functions (PUFs) implementations, providing a Root-of-Trust for cryptographic applications at a low cost. PUFs are required to return the same response each time it is requested. However, SRAM power-ups by themselves are not reliable enough for the demanding PUF applications. This problem is solved by a variety of techniques that rely on an expected baseline reliability, extracted from tests performed under process, voltage and temperature variations. Nevertheless, aging effects, specifically Bias Temperature Instability (BTI), can have a significant impact that may not conform to the said baseline and are often ignored or overlooked due to the difficulty in properly characterizing and modeling them. In this work, we employ our custom chip specifically made to facilitate the characterization of aging through stress, i.e., applying a supply voltage larger than the nominal voltage to accelerate the impact of BTI and thus provide a more detailed look into the behavior of aging in an SRAM PUF array.</dc:description>
<dc:description>This work was supported by grant PID2019-103869RB-C31 funded by MCIN/AEI/10.13039/501100011033. The work was also supported by grant TED2021-131240B-I00 funded by MCIN/AEI/10.13039/501100011033 and by the “European Union NextGenerationEU/PRTR” and by grant ProyExcel_00536 funded by Consejería de Universidad, Investigación e Innovación of Junta de Andalucía. Andrés Santana Andreo was supported by grant PRE-2020- 093167 funded by MCIN/AEI/10.13039/501100011033 and by “ESF Investing in your future”.</dc:description>
<dc:description>Peer reviewed</dc:description>
<dc:date>2024-04-24T16:24:33Z</dc:date>
<dc:date>2024-04-24T16:24:33Z</dc:date>
<dc:date>2023-07-31</dc:date>
<dc:type>Conference Paper</dc:type>
<dc:identifier>9798350332650</dc:identifier>
<dc:identifier>http://hdl.handle.net/10261/354894</dc:identifier>
<dc:identifier>10.1109/SMACD58065.2023.10192122</dc:identifier>
<dc:identifier>2-s2.0-85168675577</dc:identifier>
<dc:identifier>https://api.elsevier.com/content/abstract/scopus_id/85168675577</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>#PLACEHOLDER_PARENT_METADATA_VALUE#</dc:relation>
<dc:relation>#PLACEHOLDER_PARENT_METADATA_VALUE#</dc:relation>
<dc:relation>#PLACEHOLDER_PARENT_METADATA_VALUE#</dc:relation>
<dc:relation>info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-103869RB-C31/ES/THE VARIABILITY CHALLENGE IN NANO-CMOS: FROM DEVICE MODELING TO IC DESIGN FOR MITIGATION AND EXPLOITATION (VIGILANT-IMSE)/</dc:relation>
<dc:relation>info:eu-repo/grantAgreement/AEI/ PLAN ESTATAL DE INVESTIGACIÓN CIENTÍFICA, TÉCNICA Y DE INNOVACIÓN 2021-2023/TED2021-131240B-I00/ES VARIABILIDAD TEMPORAL EN CIRCUITOS INTEGRADOS: ENEMIGO (Y COMO COMBATIRLO PARA LA ECONOMIA CIRCULAR) Y AMIGO (Y COMO EXPLOTARLO PARA UNA SOLUCION DISRUPTIVA EN CIBERSEGURIDAD)</dc:relation>
<dc:relation>info:eu-repo/grantAgreement/Junta de Andalucia/ PLAN ANDALUZ DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN (PAIDI 2020)/ ProyExcel_00536/EXPLOTACIÓN DEL RTN PARA SEGURIDAD HARDWARE RESISTENTE AL ENVEJECIMIENTO (RTN-SECURE)</dc:relation>
<dc:relation>Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023</dc:relation>
<dc:relation>Postprint</dc:relation>
<dc:relation>https://doi.org/10.1109/SMACD58065.2023.10192122</dc:relation>
<dc:relation>Sí</dc:relation>
<dc:rights>open</dc:rights>
<dc:publisher>Institute of Electrical and Electronics Engineers</dc:publisher>
</oai_dc:dc>